Journal article
Negative photoresponse in modulation doped field effect transistors (MODFET's) - Theory and experiment
IEEE transactions on microwave theory and techniques, v 43(3), pp 511-517
01 Mar 1995
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Abstract
A model for the mechanism of negative photoresponse, namely, the decrease of drain current under illumination, in AlGaAs/GaAs MODFETs is presented. Also, a comprehensive experimental study discussing the dependence of this phenomena on gate and drain to source bias voltages and optical power, as well as a comparison with devices that show the usual positive photoresponse, is reported. The negative photoresponse is attributed to trapping of photogenerated carriers in the GaAs buffer layer, causing a change in the potential profile and consequent reduction in the number of carriers in the 2-DEG channel. The above theory is supported by numerical solution of Poisson's and electron continuity equation, using the FEM. The implications of the negative photoresponse on the high-speed photodetection properties of MODFET devices are discussed. (Author)
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Details
- Title
- Negative photoresponse in modulation doped field effect transistors (MODFET's) - Theory and experiment
- Creators
- Murilo Romero - Drexel UniversityPeter Herczfeld - Drexel University
- Publication Details
- IEEE transactions on microwave theory and techniques, v 43(3), pp 511-517
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1995QM88700006
- Scopus ID
- 2-s2.0-0029273889
- Other Identifier
- 991019174223904721
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- Web of Science research areas
- Engineering, Electrical & Electronic