Journal article
Non-metallic behavior of cesium on GaAs(110)
Surface science letters, v 208(1), pp L1-L6
1989
Abstract
The Cs/GaAs(110) interface provides a model system for investigations into the initial stages of metallization of a semiconductor surface. We have examined the valence states of both clean GaAs(110) and Cs/GaAs(110) by angle-resolved photoemission spectroscopy. For Cs exposures at room temperature, the Cs coverage does not exceed one monolayer and the resulting interface is non-metallic. The Cs coverage can be increased by cooling the substrate to ∼ 190 K, whereupon the second Cs layer is metallic.
Metrics
Details
- Title
- Non-metallic behavior of cesium on GaAs(110)
- Creators
- T. Maeda Wong - Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USAD. Heskett - University of PennsylvaniaN.J. Dinardo - Drexel UniversityE.W. Plummer - University of Pennsylvania
- Publication Details
- Surface science letters, v 208(1), pp L1-L6
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1989R966800001
- Scopus ID
- 2-s2.0-4243578310
- Other Identifier
- 991019174735804721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Chemistry, Physical
- Physics, Condensed Matter