Journal article
On the active surface layer in CF3+ etching of Si: Atomistic simulation and a simple mass balance model
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, v 18(2), pp 411-416
01 Mar 2000
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Molecular dynamics (MD) simulations of CF3+ ion bombardment of Si predict the formation of a steady-state fluorocarbosilyl mixing layer that actively participates in the etching of the underlying Si. The active nature of this mixing layer has been characterized by computing atomic residence time distributions (RTDs) for adsorbed fluorine and carbon. The average residence time of carbon in the layers is seen to increase dramatically as ion energy increases, while that of fluorine is not sensitive to ion energy. The overall RTDs compare well with those of an ideal stirred tank. A simple “well-mixed” transient mass balance model is presented. The phenomenology of this model is based on interpretations of the MD results. The model correctly predicts the evolution of atomic concentrations in the mixing layer. Both the MD and model results shed new light on how CF3+ ions etch Si.
Metrics
Details
- Title
- On the active surface layer in CF3+ etching of Si: Atomistic simulation and a simple mass balance model
- Creators
- Cameron F Abrams - Drexel University, Chemical and Biological EngineeringDavid B Graves - University of California, Berkeley
- Publication Details
- Journal of vacuum science & technology. A, Vacuum, surfaces, and films, v 18(2), pp 411-416
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemical and Biological Engineering
- Web of Science ID
- WOS:000085831200022
- Scopus ID
- 2-s2.0-0034155683
- Other Identifier
- 991014970039404721
UN Sustainable Development Goals (SDGs)
This publication has contributed to the advancement of the following goals:
Source: SDGs in the Output
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Materials Science, Coatings & Films
- Physics, Applied