- Title
- Optical and electrical characterization of GaAs-based high-speed and high-sensitivity delta-doped resonant cavity-enhanced HMSM photodetector
- Creators
- XIYING XIYING CHEN - Central Laboratory, Mosel Vitelic Corporation, San Jose, CA 95134, United StatesBahram NABET - Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, United StatesXIA XIA ZHAO - Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, United StatesHung-Jen HUANG - Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, United StatesAdriano COLA - Institute of Microelectronics and Microsystems, National Council of Research (IMM-CNR), Lecce 73100, ItalyFabio QUARANTA - Institute of Microelectronics and Microsystems, National Council of Research (IMM-CNR), Lecce 73100, ItalyAntonietta TAURINO - Institute of Microelectronics and Microsystems, National Council of Research (IMM-CNR), Lecce 73100, ItalyMarc CURRIE - Institute of Microelectronics and Microsystems, National Council of Research (IMM-CNR), Lecce 73100, Italy
- Publication Details
- IEEE transactions on electron devices, v 52(4), pp 454-464
- Publisher
- Institute of Electrical and Electronics Engineers; New York, NY
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000227748500004
- Scopus ID
- 2-s2.0-17444405278
- Other Identifier
- 991014878544104721
Journal article
Optical and electrical characterization of GaAs-based high-speed and high-sensitivity delta-doped resonant cavity-enhanced HMSM photodetector
IEEE transactions on electron devices, v 52(4), pp 454-464
2005
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Physics, Applied