Journal article
Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source
IEEE transactions on electron devices, v 36(2), pp 367-374
01 Feb 1989
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
The design, fabrication, and application of optically activated switches is described. A 0.25-mm-thick Si p-i-n diode, 3.0 mm in diameter, was tested using an 808-nm 2-D diode laser array (measuring about 2 mm x 5 mm) as an optical source. Preliminary testing of a 0.25-mm-thick device has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon activation with 200 W of optical power (the pulse width was 10 microsec). The same device, while being pulse biased to 2.0 kV, has demonstrated 20-A pulses (100-ns pulse width) with less than 10-ns risetime. The laser peak power was 500 W. (I.E.)
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Details
- Title
- Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source
- Creators
- Arye Rosen - Sarnoff CorporationPAULJ Stabile - Sarnoff CorporationDANIELW Bechtle - Sarnoff CorporationWalter Janton - Sarnoff CorporationANNAM Gombar - Sarnoff CorporationAaron J Rosen - Pathology (and Laboratory Medicine)
- Publication Details
- IEEE transactions on electron devices, v 36(2), pp 367-374
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering; Pathology (and Laboratory Medicine)
- Web of Science ID
- WOS:A1989R741700018
- Scopus ID
- 2-s2.0-0024610566
- Other Identifier
- 991019173959704721
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- Collaboration types
- Industry collaboration
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Physics, Applied