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Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage
Journal article   Peer reviewed

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

Xinyi Chen, Ekaterina Pomerantseva, Parag Banerjee, Keith Gregorczyk, Reza Ghodssi and Gary Rubloff
Chemistry of materials, v 24(7), pp 1255-1261
10 Apr 2012

Abstract

Chemistry Chemistry, Physical Materials Science Materials Science, Multidisciplinary Physical Sciences Science & Technology Technology
A new atomic layer deposition (ALD) process for V2O5 using ozone (O-3) as oxidant has been developed that resulted in crystalline V2O5 thin films which are single-phase and orthorhombic on various substrates (silicon, Au-coated stainless steel, and anodic aluminum oxide (AAO)) without any thermal post-treatment. Within a fairly narrow temperature window (170-185 degrees C), this low temperature process yields a growth rate of similar to 0.27 angstrom/cycle on Si. It presents good uniformity on planar substrates. Excellent conformality enables deposition into high aspect ratio (AR) nanopores (AR > 100), as needed for fabrication of three-dimensional (3D) nanostructures for next generation electrochemical energy storage devices. V2O5 films obtained using O-3-based ALD showed superior electrochemical performance in lithium cells, with initial specific discharge capacity of 142 mAh/g in the potential range of 2.6-4.0 V, as well as excellent rate capability and cycling stability. These benefits are attributed primarily to the crystallinity of the material and to fast transport through the thin active storage layers used.

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Web of Science research areas
Chemistry, Physical
Materials Science, Multidisciplinary
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