Journal article
P-type ohmic contacts of MBenes with MoS2 for nanodevices and logic circuits
2d materials, v 9(4)
01 Oct 2022
Abstract
Based on first-principles calculations and quantum transport simulations, we systematically investigate the possibility of using two-dimensional transition metal borides (MBenes) as electrodes for two-dimensional monolayer MoS2 via interfacial interactions, band bending, vertical Schottky barrier, tunneling probability, and lateral Schottky barrier. The weak interaction between the functionalized MBenes and MoS2 results in MoS2 retaining its original intrinsic properties while significantly reducing the Fermi level pinning effect; this, is perfectly consistent with the revised Schottky-Mott model after considering charge redistribution. Combined with band calculations and device local projection density of states, MoS2/TiBO, MoS2/TiBF, and MoS2/MoBO, either with the vertical hole Schottky barrier or the lateral hole Schottky barrier, are negative, forming p-type ohmic contacts. Our work provides theoretical guidance for constructing high-performance nanodevices and MoS2-based logic circuits for large-scale integrated circuits. We demonstrate the outstanding potential of MBenes as electrodes for nanodevices.
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Details
- Title
- P-type ohmic contacts of MBenes with MoS2 for nanodevices and logic circuits
- Creators
- Pengfei Hou - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R ChinaJingyi Liu - Jilin Univ, Sch Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ MOE, Changchun 130012, Peoples R ChinaDi Jin - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R ChinaYumiao Tian - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R ChinaXiaochun Liu - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R ChinaYu Xie - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R ChinaFei Du - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R ChinaYury Gogotsi - Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAAleksandra Vojvodic - Univ Penn, Dept Chem & Biomol Engn, Philadelphia, PA 19104 USAXing Meng - Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China
- Publication Details
- 2d materials, v 9(4)
- Publisher
- IOP Publishing Ltd
- Number of pages
- 11
- Grant note
- 12022408 / National Natural Science Foundation of China; National Natural Science Foundation of China (NSFC)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000852040900001
- Scopus ID
- 2-s2.0-85144292577
- Other Identifier
- 991019186621404721
InCites Highlights
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- Physics, Applied