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Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer
Journal article   Open access   Peer reviewed

Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

Marc Currie, Pouya Dianat, Anna Persano, Maria Concetta Martucci, Fabio Quaranta, Adriano Cola and Bahram Nabet
Sensors (Basel, Switzerland), v 13(2), pp 2475-2483
01 Feb 2013
PMID: 23429510
url
https://doi.org/10.3390/s130202475View
Published, Version of Record (VoR)CC BY V4.0 Open

Abstract

Chemistry Chemistry, Analytical Engineering Engineering, Electrical & Electronic Instruments & Instrumentation Physical Sciences Science & Technology Technology
Low temperature growth of GaAs (LT-GaAs) near 200 degrees C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature similar to 600 degrees C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster-similar to 6 ps for a cathode-anode separation of 1.3 mu m and similar to 12 ps for distances more than 3 mu m.

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Collaboration types
Domestic collaboration
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Web of Science research areas
Chemistry, Analytical
Engineering, Electrical & Electronic
Instruments & Instrumentation
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