Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

G. Gallina; Y. Guan; F. Retiere; G. Cao; A. Bolotnikov; I. Kotov; S. Rescia; A. K. Soma; T. Tsang; L. Darroch; T. Brunner; J. Bolster; J. R. Cohen; T. Pinto Franco; W. C. Gillis; H. Peltz Smalley; S. Thibado; A. Pocar; A. Bhat; A. Jamil; D. C. Moore; G. Adhikari; S. Al Kharusi; E. Angelico; I. J. Arnquist; P. Arsenault; I. Badhrees; J. Bane; V. Belov; E. P. Bernard; T. Bhatta; P. A. Breur; J. P. Brodsky; E. Brown; E. Caden; L. Cao; C. Chambers; B. Chana; S. A. Charlebois; D. Chernyak; M. Chiu; B. Cleveland; R. Collister; M. Cvitan; J. Dalmasson; T. Daniels; K. Deslandes; R. DeVoe; M. L. di Vacri; Y. Ding; M. J. Dolinski; A. Dragone; J. Echevers; B. Eckert; M. Elbeltagi; L. Fabris; W. Fairbank; J. Farine; Y. S. Fu; D. Gallacher; P. Gautam; G. Giacomini; C. Gingras; D. Goeldi; R. Gornea; G. Gratta; C. A. Hardy; S. Hedges; M. Heffner; E. Hein; J. Holt; E. W. Hoppe; J. Hößl; A. House; W. Hunt; A. Iverson; X. S. Jiang; A. Karelin; L. J. Kaufman; R. Krücken; A. Kuchenkov; K. S. Kumar; A. Larson; K. G. Leach; B. G. Lenardo; D. S. Leonard; G. Lessard; G. Li; S. Li; Z. Li; C. Licciardi; R. Lindsay; R. MacLellan; M. Mahtab; S. Majidi; C. Malbrunot; P. Margetak; P. Martel-Dion; L. Martin; J. Masbou; N. Massacret; K. McMichael; B. Mong; K. Murray; J. Nattress; C. R. Natzke; X. E. Ngwadla; J. C. Nzobadila Ondze; A. Odian; J. L. Orrell; G. S. Ortega; C. T. Overman; S. Parent; A. Perna; A. Piepke; N. Pletskova; J. F. Pratte; V. Radeka; E. Raguzin; G. J. Ramonnye; T. Rao; H. Rasiwala; K. Raymond; B. M. Rebeiro; G. Richardson; J. Ringuette; V. Riot; T. Rossignol; P. C. Rowson; L. Rudolph; R. Saldanha; S. Sangiorgio; X. Shang; F. Spadoni; V. Stekhanov; X. L. Sun; A. Tidball; T. Totev; S. Triambak; R. H. M. Tsang; O. A. Tyuka; F. Vachon; M. Vidal; S. Viel; G. Visser; M. Wagenpfeil; M. Walent; K. Wamba; Q. Wang; W. Wang; Y. Wang; M. Watts; W. Wei; L. J. Wen; U. Wichoski; S. Wilde; M. Worcester; W. H. Wu; X. Wu; L. Xie; W. Yan; H. Yang; L. Yang; O. Zeldovich; J. Zhao; T. Ziegler

doi:10.1140/epjc/s10052-022-11072-8

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Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

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Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

G. Gallina, Y. Guan, F. Retiere, G. Cao, A. Bolotnikov, I. Kotov, S. Rescia, A. K. Soma, T. Tsang, L. Darroch, …

The European physical journal. C, Particles and fields, v 82(12)

13 Dec 2022

DOI: https://doi.org/10.1140/epjc/s10052-022-11072-8

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Abstract

Astronomy

Astrophysics and Cosmology

Elementary Particles

Hadrons

Heavy Ions

Measurement Science and Instrumentation

Nuclear Energy

Nuclear Physics

Physics

Physics and Astronomy

Quantum Field Theories

Quantum Field Theory

Regular Article - Experimental Physics

String Theory

Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0 ν β β ), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0 ν β β of 136 Xe with projected half-life sensitivity of 1.35 × 10 28 yr. To reach this sensitivity, the design goal for nEXO is ≤ 1% energy resolution at the decay Q -value ( 2458.07 ± 0.31 keV). Reaching this resolution requires the efficient collection of both the ionization and scintillation produced in the detector. The nEXO design employs Silicon Photo-Multipliers (SiPMs) to detect the vacuum ultra-violet, 175 nm scintillation light of liquid xenon. This paper reports on the characterization of the newest vacuum ultra-violet sensitive Fondazione Bruno Kessler VUVHD3 SiPMs specifically designed for nEXO, as well as new measurements on new test samples of previously characterised Hamamatsu VUV4 Multi Pixel Photon Counters (MPPCs). Various SiPM and MPPC parameters, such as dark noise, gain, direct crosstalk, correlated avalanches and photon detection efficiency were measured as a function of the applied over voltage and wavelength at liquid xenon temperature (163 K). The results from this study are used to provide updated estimates of the achievable energy resolution at the decay Q -value for the nEXO design.

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Title: Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO
Creators: G. Gallina - Princeton University
Y. Guan - Institute of High Energy Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences
F. Retiere - TRIUMF
G. Cao - Institute of High Energy Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences
A. Bolotnikov - Brookhaven National Laboratory
I. Kotov - Brookhaven National Laboratory
S. Rescia - Brookhaven National Laboratory
A. K. Soma - Drexel University
T. Tsang - Brookhaven National Laboratory
L. Darroch - McGill University
T. Brunner - McGill University
J. Bolster - Massachusetts Institute of Technology
J. R. Cohen - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
T. Pinto Franco - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
W. C. Gillis - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
H. Peltz Smalley - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
S. Thibado - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
A. Pocar - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
A. Bhat - Yale University
A. Jamil - Yale University
D. C. Moore - Yale University
G. Adhikari - University of California San Diego
S. Al Kharusi - McGill University
E. Angelico - Stanford University
I. J. Arnquist - Pacific Northwest National Laboratory
P. Arsenault - Université de Sherbrooke
I. Badhrees - Carleton University
J. Bane - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
V. Belov - National Research Center “Kurchatov Institute”
E. P. Bernard - Lawrence Livermore National Laboratory
T. Bhatta - University of Kentucky
P. A. Breur - SLAC National Accelerator Laboratory
J. P. Brodsky - Lawrence Livermore National Laboratory
E. Brown - Rensselaer Polytechnic Institute
E. Caden - Laurentian University
L. Cao - Institute of Microelectronics, Chinese Academy of Sciences
C. Chambers - McGill University
B. Chana - Carleton University
S. A. Charlebois - Université de Sherbrooke
D. Chernyak - University of Alabama
M. Chiu - Brookhaven National Laboratory
B. Cleveland - Laurentian University
R. Collister - Carleton University
M. Cvitan - TRIUMF
J. Dalmasson - Stanford University
T. Daniels - Department of Physics and Physical Oceanography, University of North Carolina at Wilmington
K. Deslandes - Université de Sherbrooke
R. DeVoe - Stanford University
M. L. di Vacri - Pacific Northwest National Laboratory
Y. Ding - Institute of High Energy Physics, Chinese Academy of Sciences
M. J. Dolinski - Drexel University
A. Dragone - SLAC National Accelerator Laboratory
J. Echevers - Physics Department, University of Illinois
B. Eckert - Department of Physics, Drexel University
M. Elbeltagi - Carleton University
L. Fabris - Oak Ridge National Laboratory
W. Fairbank - Colorado State University
J. Farine - Laurentian University
Y. S. Fu - Institute of High Energy Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences
D. Gallacher - McGill University
P. Gautam - Department of Physics, Drexel University
G. Giacomini - Brookhaven National Laboratory
C. Gingras - McGill University
D. Goeldi - Carleton University
R. Gornea - Carleton University
G. Gratta - Stanford University
C. A. Hardy - Stanford University
S. Hedges - Lawrence Livermore National Laboratory
M. Heffner - Lawrence Livermore National Laboratory
E. Hein - Skyline College
J. Holt - TRIUMF
E. W. Hoppe - Pacific Northwest National Laboratory
J. Hößl - Friedrich-Alexander-Universität Erlangen-Nürnberg
A. House - Lawrence Livermore National Laboratory
W. Hunt - Lawrence Livermore National Laboratory
A. Iverson - Colorado State University
X. S. Jiang - Institute of High Energy Physics, Chinese Academy of Sciences
A. Karelin - National Research Center “Kurchatov Institute”
L. J. Kaufman - SLAC National Accelerator Laboratory
R. Krücken - University of British Columbia
A. Kuchenkov - National Research Center “Kurchatov Institute”
K. S. Kumar - Amherst Center for Fundamental Interactions and Physics Department, University of Massachusetts
A. Larson - University of South Dakota
K. G. Leach - Colorado School of Mines
B. G. Lenardo - Stanford University
D. S. Leonard - Ibs (France)
G. Lessard - Université de Sherbrooke
G. Li - Institute of High Energy Physics, Chinese Academy of Sciences
S. Li - Physics Department, University of Illinois
Z. Li - University of California San Diego
C. Licciardi - Laurentian University
R. Lindsay - University of the Western Cape
R. MacLellan - University of Kentucky
M. Mahtab - TRIUMF
S. Majidi - McGill University
C. Malbrunot - TRIUMF
P. Margetak - TRIUMF
P. Martel-Dion - Université de Sherbrooke
L. Martin - TRIUMF
J. Masbou - IMT Atlantique
N. Massacret - TRIUMF
K. McMichael - Rensselaer Polytechnic Institute
B. Mong - SLAC National Accelerator Laboratory
K. Murray - McGill University
J. Nattress - Oak Ridge National Laboratory
C. R. Natzke - Colorado School of Mines
X. E. Ngwadla - University of the Western Cape
J. C. Nzobadila Ondze - University of the Western Cape
A. Odian - SLAC National Accelerator Laboratory
J. L. Orrell - Pacific Northwest National Laboratory
G. S. Ortega - Pacific Northwest National Laboratory
C. T. Overman - Pacific Northwest National Laboratory
S. Parent - Université de Sherbrooke
A. Perna - Laurentian University
A. Piepke - University of Alabama
N. Pletskova - Department of Physics, Drexel University
J. F. Pratte - Université de Sherbrooke
V. Radeka - Brookhaven National Laboratory
E. Raguzin - Brookhaven National Laboratory
G. J. Ramonnye - University of the Western Cape
T. Rao - Brookhaven National Laboratory
H. Rasiwala - McGill University
K. Raymond - TRIUMF
B. M. Rebeiro - McGill University
G. Richardson - Yale University
J. Ringuette - Colorado School of Mines
V. Riot - Lawrence Livermore National Laboratory
T. Rossignol - Université de Sherbrooke
P. C. Rowson - SLAC National Accelerator Laboratory
L. Rudolph - McGill University
R. Saldanha - Pacific Northwest National Laboratory
S. Sangiorgio - Lawrence Livermore National Laboratory
X. Shang - McGill University
F. Spadoni - Pacific Northwest National Laboratory
V. Stekhanov - National Research Center “Kurchatov Institute”
X. L. Sun - Institute of High Energy Physics, Chinese Academy of Sciences
A. Tidball - Rensselaer Polytechnic Institute
T. Totev - McGill University
S. Triambak - University of the Western Cape
R. H. M. Tsang - University of Alabama
O. A. Tyuka - University of the Western Cape
F. Vachon - Université de Sherbrooke
M. Vidal - Stanford University
S. Viel - Carleton University
G. Visser - Indiana University
M. Wagenpfeil - Friedrich-Alexander-Universität Erlangen-Nürnberg
M. Walent - Laurentian University
K. Wamba - Skyline College
Q. Wang - Institute of Microelectronics
W. Wang - University of Alabama
Y. Wang - Institute of High Energy Physics, Chinese Academy of Sciences
M. Watts - Yale University
W. Wei - Institute of High Energy Physics, Chinese Academy of Sciences
L. J. Wen - Institute of High Energy Physics, Chinese Academy of Sciences
U. Wichoski - Laurentian University
S. Wilde - Yale University
M. Worcester - Brookhaven National Laboratory
W. H. Wu - Institute of High Energy Physics, Chinese Academy of Sciences
X. Wu - Institute of Microelectronics, Chinese Academy of Sciences
L. Xie - TRIUMF
W. Yan - Institute of High Energy Physics, Chinese Academy of Sciences
H. Yang - Institute of Microelectronics, Chinese Academy of Sciences
L. Yang - University of California San Diego
O. Zeldovich - National Research Center “Kurchatov Institute”
J. Zhao - Institute of High Energy Physics, Chinese Academy of Sciences
T. Ziegler - Friedrich-Alexander-Universität Erlangen-Nürnberg
Publication Details: The European physical journal. C, Particles and fields, v 82(12)
Publisher: Springer Berlin Heidelberg
Resource Type: Journal article
Language: English
Academic Unit: Physics
Web of Science ID: WOS:000905041500003
Scopus ID: 2-s2.0-85144369055
Other Identifier: 991019388476404721

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Collaboration types: Domestic collaboration; International collaboration
Web of Science research areas: Physics, Particles & Fields

Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

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