Journal article
Photon-Induced Selenium Vacancies in TiSe2
25 Oct 2016
Abstract
TiSe2 is a member of transition metal dichalcogenide family of layered
van-der-Waals materials that exhibits some distinctive electronic and optical
properties. Here, we perform Raman spectroscopy studies on single crystal TiSe2
to investigate photon-induced defects associated with formation of selenium
vacancies. Two additional Eg phonon peaks are observed in the laser-irradiated
regions, consistent with Raman spectra of selenium deficient TiSe2. Temperature
dependent studies of the threshold laser intensity necessary to form selenium
vacancies show that there is a linear dependence. We extract the relevant
activation energy for selenium vacancy nucleation. The impact of these results
on the properties of strongly correlated electron states in TiSe2 are
discussed.
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Details
- Title
- Photon-Induced Selenium Vacancies in TiSe2
- Creators
- David B LioiDavid J GosztolaGary P WiederrechtGoran Karapetrov
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Identifiers
- 991019295198604721