David B. Lioi, David J. Gosztola, Gary P. Wiederrecht, Goran Karapetrov and Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
TiSe2 is a member of the transition metal dichalcogenide family of layered van der Waals materials that exhibits some distinct electronic and optical properties. Here, we perform the Raman spectroscopy and microscopy studies on single crystal TiSe2 to investigate the thermal and photon-induced defects associated with the diffusion of selenium to the surface. Additional phonon peaks near 250 cm(-1) are observed in the laser-irradiated regions that are consistent with the formation of amorphous and nanocrystalline selenium on the surface. Temperature dependent studies of the threshold temperature and laser intensity necessary to initiate selenium migration to the surface show an activation barrier for the process of 1.55 eV. The impact of these results on the properties of strongly correlated electron states in TiSe2 is discussed. Published by AIP Publishing.
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Publication Details
Applied physics letters, v 110(8)
Publisher
American Institute of Physics
Number of pages
4
Grant note
1408151 / Directorate For Engineering; National Science Foundation (NSF); NSF - Directorate for Engineering (ENG)
DE-AC02-06CH11357 / U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences; United States Department of Energy (DOE)
01-682 / Ministry of Science of Montenegro
ECCS-1408151 / National Science Foundation; National Science Foundation (NSF)
Resource Type
Journal article
Language
English
Academic Unit
Physics
Web of Science ID
WOS:000394762600015
Scopus ID
2-s2.0-85013455998
Other Identifier
991019168988204721
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