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Photoresponse of microwave transistors to high-frequency modulated lightwave carrier signal
Journal article   Peer reviewed

Photoresponse of microwave transistors to high-frequency modulated lightwave carrier signal

Luiz E M de Barros, Arthur Paolella, Michael Frankel, Murilo Romero, Peter Herczfeld and A Madjar
IEEE transactions on microwave theory and techniques, v 45(8), pp 1368-1374
01 Aug 1997
DOI: https://doi.org/10.1109/22.618438
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Abstract

Described in this paper are the photoresponse characteristics of microwave transistors, both unipolar (MESFETs and MODFETs) and bipolar (HBTs). Investigation includes time- and frequency-domain measurements. For unipolar devices FETs, the two dominant photodetection mechanisms, photoconductive and photovoltaic, are clearly identified within the same device for the first time. It is shown that even high-speed FETs are limited to a photonic bandwidth of a few megahertz, if photodetection and amplification are to be achieved simultaneously. In contrast, bipolars HBTs can provide optical gain up to the millimeter-wave range. It is shown that their bandwidth to a modulated optical input is closely related to the microwave bandwidth, and that parameters such as base-access resistance and base-emitter capacitance are critical to photoresponse optimization. (Author)

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20 citations in Web of Science
23 citations in Scopus

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Collaboration types
Domestic collaboration
Web of Science research areas
Engineering, Electrical & Electronic
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