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RBS studies of the absolute coverage of Cs on the Si(1 1 1)-7×7 surface
Journal article   Peer reviewed

RBS studies of the absolute coverage of Cs on the Si(1 1 1)-7×7 surface

W.B Sherman, R Banerjee, N.J DiNardo and W.R Graham
Surface science, v 479(1), pp 136-140
2001

Abstract

Alkali metals Ion scattering spectroscopy Low index single crystal surfaces Metal–semiconductor interfaces Silicon Surface structure, morphology, roughness, and topography
The absolute saturation coverage of Cs adsorbed on the Si(1 1 1)-7×7 surface at room temperature has been measured using Rutherford backscattering spectrometry. At saturation, coverage is 0.51±0.02 monolayers (ML) where 1 ML=7.83×10 14 atoms/cm 2. This value constrains proposed ordered structural models by placing a strict upper limit on the absolute coverage of the first Cs layer adsorbed on Si(1 0 0) at room temperature. Proposed structural models with lower coverages of ordered Cs must include substantial disordered components.

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Collaboration types
Domestic collaboration
Web of Science research areas
Chemistry, Physical
Physics, Condensed Matter
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