Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon

Journal article

Peer reviewed

Yury GOGOTSI, GUOHUI GUOHUI ZHOU, Sang-Song KU and Sabri CETINKUNT

Semiconductor science and technology, v 16(5), pp 345-352

2001

Additional Links

Machining, milling

Materials synthesis; materials processing

Materials science

Physics

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

12 Record Views

137 citations in Scopus

Title: Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon
Creators: Yury GOGOTSI - Department of Materials Engineering, Drexel University, Philadelphia, PA 19104, United States
GUOHUI GUOHUI ZHOU - Department of Mechanical Engineering, 842 W Taylor Street, University of Illinois at Chicago, Chicago, IL 60607, United States
Sang-Song KU - Department of Mechanical Engineering, 842 W Taylor Street, University of Illinois at Chicago, Chicago, IL 60607, United States
Sabri CETINKUNT - Department of Mechanical Engineering, 842 W Taylor Street, University of Illinois at Chicago, Chicago, IL 60607, United States
Publication Details: Semiconductor science and technology, v 16(5), pp 345-352
Publisher: Institute of Physics; Bristol
Resource Type: Journal article
Language: English
Academic Unit: Materials Science and Engineering
Web of Science ID: WOS:000168783400015
Scopus ID: 2-s2.0-0035326792
Other Identifier: 991014969853404721

This publication has contributed to the advancement of the following goals:

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types: Domestic collaboration
Web of Science research areas: Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter