Journal article
Rectification properties and interface states of heterojunctions between solid C-60 and n-type GaAs
Applied physics letters, v 69(23), pp 3557-3559
02 Dec 1996
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Abstract
Solid C-60/n-GaAs heterojunctions have been fabricated by deposition of solid C-60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 10(6) at a bias of +/-1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C-60/GaAs interface has been observed by the deep level transient spectroscopy technique. (C) 1996 American Institute of Physics.
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Details
- Title
- Rectification properties and interface states of heterojunctions between solid C-60 and n-type GaAs
- Creators
- K M ChenY X ZhangG G QinS X JinK WuC Y LiZ N GuX H Zhou
- Publication Details
- Applied physics letters, v 69(23), pp 3557-3559
- Publisher
- American Institute of Physics
- Number of pages
- 3
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:A1996VX77100036
- Scopus ID
- 2-s2.0-0001444516
- Other Identifier
- 991019196443904721
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- Web of Science research areas
- Physics, Applied