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Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths
Journal article   Open access   Peer reviewed

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

P Lv, G. F Cao, L. J Wen, S. Al Kharusi, G Anton, I. J Arnquist, I Badhrees, P. S Barbeau, D Beck, V Belov, …
IEEE transactions on nuclear science, v 67(12), pp 2501-2510
Dec 2020
url
https://doi.org/10.1109/tns.2020.3035172View
Accepted (AM)Open Access (Publisher-Specific) Open

Abstract

Diffuse reflectance Laser beams Measurement by laser beam Optical variables measurement Photodetectors photon detection efficiency (PDE) Photonics silicon photomultiplier (SiPM) specular reflectance Surface treatment vacuum ultraviolet (VUV)
Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

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Domestic collaboration
International collaboration
Web of Science research areas
Engineering, Electrical & Electronic
Nuclear Science & Technology
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