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Journal article
Resonant domain-wall-enhanced tunable microwave ferroelectrics
Nature (London), v 560(7720), pp 622-627
30 Aug 2018
PMID: 30127406
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Ordering of ferroelectric polarization(1) and its trajectory in response to an electric field(2) are essential for the operation of non-volatile memories(3), transducers(4) and electro-optic devices(5). However, for voltage control of capacitance and frequency agility in telecommunication devices, domain walls have long been thought to be a hindrance because they lead to high dielectric loss and hysteresis in the device response to an applied electric field(6). To avoid these effects, tunable dielectrics are often operated under piezoelectric resonance conditions, relying on operation well above the ferroelectric Curie temperature(7), where tunability is compromised. Therefore, there is an unavoidable trade-off between the requirements of high tunability and low loss in tunable dielectric devices, which leads to severe limitations on their figure of merit. Here we show that domain structure can in fact be exploited to obtain ultralow loss and exceptional frequency selectivity without piezoelectric resonance. We use intrinsically tunable materials with properties that are defined not only by their chemical composition, but also by the proximity and accessibility of thermodynamically predicted strain-induced, ferroelectric domain-wall variants(8). The resulting gigahertz microwave tunability and dielectric loss are better than those of the best film devices by one to two orders of magnitude and comparable to those of bulk single crystals. The measured quality factors exceed the theoretically predicted zerofield intrinsic limit owing to domain-wall fluctuations, rather than field-induced piezoelectric oscillations, which are usually associated with resonance. Resonant frequency tuning across the entire L, S and C microwave bands (1-8 gigahertz) is achieved in an individual device-a range about 100 times larger than that of the best intrinsically tunable material. These results point to a rich phase space of possible nanometre-scale domain structures that can be used to surmount current limitations, and demonstrate a promising strategy for obtaining ultrahigh frequency agility and low-loss microwave devices.
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Details
- Title
- Resonant domain-wall-enhanced tunable microwave ferroelectrics
- Creators
- Zongquan Gu - Drexel UniversityShishir Pandya - University of California, BerkeleyAtanu Samanta - Bar-Ilan UniversityShi Liu - Carnegie Institution for ScienceGeoffrey Xiao - Drexel UniversityCedric J. G. Meyers - University of California, Santa BarbaraAnoop R. Damodaran - University of California, BerkeleyHaim Barak - Bar-Ilan UniversityArvind Dasgupta - University of California, BerkeleySahar Saremi - University of California, BerkeleyAlessia Polemi - Drexel UniversityLiyan Wu - University of PennsylvaniaAdrian A. Podpirka - Drexel UniversityAlexandria Will-Cole - Drexel UniversityChristopher J. Hawley - Drexel UniversityPeter K. Davies - University of PennsylvaniaRobert A. York - University of California, Santa BarbaraIlya Grinberg - Bar-Ilan UniversityLane W. Martin - Lawrence Berkeley National LaboratoryJonathan E. Spanier - Drexel University
- Publication Details
- Nature (London), v 560(7720), pp 622-627
- Publisher
- Springer Nature
- Number of pages
- 7
- Grant note
- US National Science Foundation (NSF); National Science Foundation (NSF) Materials Science Division of the US Army Research Office (ARO) W911NF-14-1-0500; W911NF-14-1-0104; W911NF-14-1-0335 / ARO IIP 1549668; DMR 1608887; DMR 1708615; DMR 1608938 / NSF; National Science Foundation (NSF) DE-SC-0012375; DE-AC02-05-CH11231 / US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division; United States Department of Energy (DOE) N00014-15-112170 / Office of Naval Research Drexel University Research Computing Facility 1608887 / Division Of Materials Research; National Science Foundation (NSF); NSF - Directorate for Mathematical & Physical Sciences (MPS) DMR 1124696 / Semiconductor Research Corporation under the 'Nanoelectronics in 2020 and Beyond' programme BSF 2016637; CBET 1705440 / NSF-BSF (US-Israel Binational Science Foundation) joint programme FA9550-13-1-012 / Air Force Office of Scientific Research; United States Department of Defense; Air Force Office of Scientific Research (AFOSR)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000443218600045
- Scopus ID
- 2-s2.0-85052680836
- Other Identifier
- 991019169644504721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Physics, Applied