- Title
- Role of intermediate temperature molecular beam epitaxy grown GaAs defects in tunneling and diffusion
- Creators
- Andrew E. YoutzBahram Nabet
- Publication Details
- Journal of applied physics, v 84(5), pp 2697-2704
- Publisher
- American Institute of Physics (AIP)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000075590700046
- Scopus ID
- 2-s2.0-11644274586
- Other Identifier
- 991019168583404721
Journal article
Role of intermediate temperature molecular beam epitaxy grown GaAs defects in tunneling and diffusion
Journal of applied physics, v 84(5), pp 2697-2704
Sep 1998
Featured in Collection : UN Sustainable Development Goals @ Drexel
Metrics
Details
UN Sustainable Development Goals (SDGs)
This publication has contributed to the advancement of the following goals:
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Industry collaboration
- Domestic collaboration
- Web of Science research areas
- Physics, Applied