Journal article
Selective Etching of Silicon from Ti 3 SiC 2 (MAX) To Obtain 2D Titanium Carbide (MXene)
Angewandte Chemie (International ed.), v 57(19), pp 5444-5448
04 May 2018
PMID: 29518271
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti3AlC2. Here, we report on the synthesis of Ti3C2 (MXene) through selective etching of silicon from titanium silicon carbide—the most common MAX phase. Liters of colloidal solutions of delaminated Ti3SiC2-derived MXene (0.5–1.3 mg mL−1) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti3AlC2. This new synthesis method greatly widens the range of precursors for MXene synthesis.
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Details
- Title
- Selective Etching of Silicon from Ti 3 SiC 2 (MAX) To Obtain 2D Titanium Carbide (MXene)
- Creators
- Mohamed Alhabeb - Drexel UniversityKathleen Maleski - Drexel UniversityTyler S Mathis - Drexel UniversityAsia Sarycheva - Drexel UniversityChristine B Hatter - Drexel UniversitySimge Uzun - Drexel UniversityAriana Levitt - Drexel UniversityYury Gogotsi - Drexel University
- Publication Details
- Angewandte Chemie (International ed.), v 57(19), pp 5444-5448
- Publisher
- Wiley; Germany
- Number of pages
- 5
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000431035500046
- Scopus ID
- 2-s2.0-85044405173
- Other Identifier
- 991014969777504721
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- Web of Science research areas
- Chemistry, Multidisciplinary