Journal article
Semiconductor-to-metal transition in an ultrathin interface: Cs /GaAs(110)
Physical review letters, v 65(17), pp 2177-2180
01 Jan 1990
PMID: 10042473
Abstract
Electronic excitation spectra (0 < or = h omega < 4 eV) of the ultrathin interface are measured at various stages of development. Spectral features that appear as a function of Cs coverage identify the semiconductor-to-metal transition. The semiconducting interface observed up to one Cs layer is characterized as a 2-D Mott insulator. Interfacial metallization upon Cs multilayer growth is identified by a metallic-excitation continuum and collective excitation related to the Cs surface plasmon.
Metrics
Details
- Title
- Semiconductor-to-metal transition in an ultrathin interface: Cs /GaAs(110)
- Creators
- N DiNardo - Drexel UniversityT-M Wong - Drexel UniversityE Plummer - Drexel University
- Publication Details
- Physical review letters, v 65(17), pp 2177-2180
- Publisher
- Cold Spring Harbor Press
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1990ED48300024
- Scopus ID
- 2-s2.0-4243739219
- Other Identifier
- 991019174125204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Physics, Multidisciplinary