Journal article
Simulation of the effects of capture rates and the band mobility on transient currents in a-Si:H pin devices
Journal of non-crystalline solids, v 114(1), pp 351-353
1989
Abstract
Transient current measurements in
a-Si:H
pin diodes show a distinctive final increase in the current as it approaches its final value. The presence or absence of this increase, and also other aspects of the shape of the final part of the transient, are strongly dependent on the values of the band mobilities and of the capture coefficients. We discuss the results of simulations of these experiments and the ranges of values for the transport and trapping parameters which are consistent with the shape of the experimentally observed transients.
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Details
- Title
- Simulation of the effects of capture rates and the band mobility on transient currents in a-Si:H pin devices
- Creators
- Finley R Shapiro - Drexel UniversityMarvin Silver - University of North Carolina at Chapel Hill
- Publication Details
- Journal of non-crystalline solids, v 114(1), pp 351-353
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:A1989CK49700111
- Scopus ID
- 2-s2.0-0024848434
- Other Identifier
- 991019173858004721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Materials Science, Ceramics
- Materials Science, Multidisciplinary