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Published, Version of Record (VoR)Open Access (License Unspecified), Open
Journal article
Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering
Journal of nanotechnology in engineering and medicine, v 5(4), pp 0410041-040903/9
Nov 2014
PMID: 26199680
Abstract
Single-crystalline nanoporous gallium nitride (GaN) thin films were fabricated with the pore size readily tunable in 20-100 nm. Uniform adhesion and spreading of human mesenchymal stem cells (hMSCs) seeded on these thin films peak on the surface with pore size of 30 nm. Substantial cell elongation emerges as pore size increases to ∼80 nm. The osteogenic differentiation of hMSCs occurs preferentially on the films with 30 nm sized nanopores, which is correlated with the optimum condition for cell spreading, which suggests that adhesion, spreading, and stem cell differentiation are interlinked and might be coregulated by nanotopography.
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3 citations in Scopus
Details
- Title
- Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering
- Creators
- Lin Han - Yale UniversityJing Zhou - Yale UniversityYubing Sun - University of Michigan–Ann ArborYu Zhang - Yale UniversityJung Han - Yale UniversityJianping Fu - University of Michigan–Ann ArborRong Fan - Yale University
- Publication Details
- Journal of nanotechnology in engineering and medicine, v 5(4), pp 0410041-040903/9
- Publisher
- ASME
- Grant note
- R00 CA136759 / NCI NIH HHS
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- School of Biomedical Engineering, Science, and Health Systems
- Scopus ID
- 2-s2.0-84936980464
- Other Identifier
- 991019186952004721