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Single ZnO nanowire-PZT optothermal field effect transistors
Journal article   Peer reviewed

Single ZnO nanowire-PZT optothermal field effect transistors

Chun-Yi Hsieh, Meng-Lin Lu, Ju-Ying Chen, Yung-Ting Chen, Yang-Fang Chen, Wan Y Shih and Wei-Heng Shih
Nanotechnology, v 23(35), pp 355201-1-5
15 Aug 2012
PMID: 22895012

Abstract

A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr0.3Ti0.7)O3 (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

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Collaboration types
Domestic collaboration
International collaboration
Web of Science research areas
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Physics, Applied
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