Journal article
Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination
IEEE transactions on electron devices, v 43(7), pp 1061-1065
01 Jan 1996
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
This paper describes the determination of the steady state operating characteristics of an optically controlled Si p-i-n illuminated from either top or bottom for varying electrode spacings and conducting layer thicknesses. Optically controlled p-i-n diodes have previously been used in both microwave and pulsed power applications and are now being considered for use in high-power, low-frequency (60 Hz) switching such as Static Var Compensators.
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Details
- Title
- Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination
- Creators
- John Schwartzenberg - Drexel UniversityChika Nwankpa - Drexel UniversityRobert Fischl - Drexel UniversityArye RosenDean GilbertDavid RichardsonAaron J Rosen - Pathology (and Laboratory Medicine)
- Publication Details
- IEEE transactions on electron devices, v 43(7), pp 1061-1065
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering; Pathology (and Laboratory Medicine)
- Web of Science ID
- WOS:A1996UU61900004
- Scopus ID
- 2-s2.0-0030195955
- Other Identifier
- 991019169707804721
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- Collaboration types
- Industry collaboration
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Physics, Applied