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Stress Driven Rearrangement Instability of Crystalline Films with Electromechanical Interaction
Journal article   Open access

Stress Driven Rearrangement Instability of Crystalline Films with Electromechanical Interaction

Peter Chung, John Clayton, Melanie M Cole, Michael Grinfeld, Pavel Grinfeld and William Nothwang
MRS proceedings, v 924, pp 97-102
2006
DOI: https://doi.org/10.1557/PROC-0924-Z07-04
url
http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.515.9964View
SubmittedOpen Access (License Unspecified),  Open

Abstract

ferroelectric morphology self-assembly
It was demonstrated, on general thermodynamic grounds, that, in non-hydrostatically stressed elastic systems, phase and grain interfaces undergo morphological destabilization due to different mechanisms of “mass rearrangement”. Destabilization of free surfaces due to the combined action of mass rearrangement in the presence of electrostatic field has been well known since the end of the 19th century. Currently, morphological instabilities of thin solid films with electro-mechanical interactions have found various applications in physics and engineering. In this paper, we investigate the combined effects of the stress driven rearrangement instabilities and the destabilization due to the electro-mechanical interactions. The paper presents relevant results of theoretical studies for ferroelectric thin films. Theoretical analysis involves highly nonlinear equations allowing analytical methods only for the initial stage of unstable growth. At present, we are unable to explore analytically the most important, deeply nonlinear regimes of growth. To avoid this difficulty, we developed numerical tools facilitating the process of solving and interpreting the results by means of visualization of developing morphologies.

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