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Stress-assisted grain growth in nanocrystalline metals: Grain boundary mediated mechanisms and stabilization through alloying
Journal article   Open access   Peer reviewed

Stress-assisted grain growth in nanocrystalline metals: Grain boundary mediated mechanisms and stabilization through alloying

Yang Zhang, Garritt J. Tucker, Jason R. Trelewicz and Vance G Nielsen
Acta materialia, v 131(C)
01 Jun 2017
DOI: https://doi.org/10.1016/j.actamat.2017.03.060
url
http://manuscript.elsevier.com/S1359645417302409/pdf/S1359645417302409.pdfView
Published, Version of Record (VoR) Open

Abstract

Grain boundaries Grain growth Molecular dynamics Nanocrystalline metals Nanoindentation
The mechanisms of stress-assisted grain growth are explored using molecular dynamics simulations of nanoindentation in nanocrystalline Ni and Ni-1 at.% P as a function of grain size and deformation temperature. Grain coalescence is primarily confined to the high stress region beneath the simulated indentation zone in nanocrystalline Ni with a grain size of 3 nm. Grain orientation and atomic displacement vector mapping demonstrates that coalescence transpires through grain rotation and grain boundary migration, which are manifested in the grain interior and grain boundary components of the average microrotation. A doubling of the grain size to 6 nm and addition of 1 at.% P eliminates stress-assisted grain growth in Ni. In the absence of grain coalescence, deformation is accommodated by grain boundary-mediated dislocation plasticity and thermally activated in pure nanocrystalline Ni. By adding solute to the grain boundaries, the temperature-dependent deformation behavior observed in both the lattice and grain boundaries inverts, indicating that the individual processes of dislocation and grain boundary plasticity will exhibit different activity based on boundary chemistry and deformation temperature. [Display omitted]

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Collaboration types
Domestic collaboration
Web of Science research areas
Materials Science, Multidisciplinary
Metallurgy & Metallurgical Engineering
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