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Surface localized states on InAs(110)
Journal article   Peer reviewed

Surface localized states on InAs(110)

D.M. Swanston, A.B. McLean, D.N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch and N.J. DiNardo
Surface science, v 312(3), pp 361-368
1994
DOI: https://doi.org/10.1016/0039-6028(94)90727-7
url
https://digitalcommons.uri.edu/phys_facpubs/373View
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Abstract

The initial state band dispersion of the A 3, A 5 and C 2 surface states on In As(110) has been determined using angle-resolved photoemission spectroscopy with synchrotron radiation. The surfaces were grown using molecular beam epitaxy. Although the measured dispersion of the anion-derived, dangling-bond A 5 surface state is reproduced very well by several surface band structure calculations, the dispersion of the lower lying C 2 surface state shows better agreement with surface electronic structure calculations based upon density functional theory. Furthermore, although the binding energy of the A 3 state near X̄ is reproduced very well by tight-binding calculations, the band gradient along the \ ̄ gGX̄ azimuth is reproduced best by calculations based on density functional theory. It is argued that the measured dispersion of the lower lying A 3 and C 2 states could be used to provide a stringent test of quasi-particle surface band structure calculations.

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17 citations in Web of Science
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Industry collaboration
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International collaboration
Web of Science research areas
Chemistry, Physical
Physics, Condensed Matter
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