Journal article
Tape Casting, Pressureless Sintering, and Grain Growth in Ti3SiC2 Compacts
Journal of the American Ceramic Society, v 87(4), pp 550-556
Apr 2004
Abstract
In this work we demonstrate that fine Ti3SiC2 powders can be tape‐cast and/or cold‐pressed and pressureless‐sintered in Ar‐ or Si‐rich atmospheres to produce fully dense, oriented microstructures in which the basal planes are parallel to the surfaces. Carbon‐ and/or Si‐rich environments suppress grain growth. In the case of the tape casting, the C‐residue from binder burnout results in small core grains relative to the surface grains that can grow significantly. When sintering in high Si activities, titanium silicide phases form at the grain boundaries that slow grain growth. Annealing the latter in Ar at 1600°C, for extended periods (30 h), rids the samples of these grain‐boundary phases, which in turn results in grain growth. The advantage of the latter process is that the final grain size distribution is more uniform from surface to bulk.
Metrics
Details
- Title
- Tape Casting, Pressureless Sintering, and Grain Growth in Ti3SiC2 Compacts
- Creators
- A. Murugaiah - Drexel UniversityA. Souchet - Drexel UniversityT. El‐RaghyM. Radovic - Drexel UniversityMats Sundberg - Kanthal AB, Hallstahammar SE‐73472, SwedenM. W. Barsoum - Drexel University
- Publication Details
- Journal of the American Ceramic Society, v 87(4), pp 550-556
- Publisher
- American Ceramics Society
- Number of pages
- 7
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000220981700004
- Scopus ID
- 2-s2.0-2342627359
- Other Identifier
- 991019167776204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Ceramics