Journal article
The 2D materials roadmap
2d materials, v 13(2), 021501
01 Jun 2026
Abstract
Over the past two decades, two-dimensional (2D) materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moir & eacute; systems. The discussions are organized into thematic sections covering emerging research areas (e.g. twisted electronics, moir & eacute; nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g. 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.
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Details
- Title
- The 2D materials roadmap
- Creators
- Wencai Ren - Chinese Academy of SciencesPeter Boggild - Tech Univ Denmark, DTU Phys, DK-2800 Lyngby, DenmarkJoan Redwing - Pennsylvania State UniversityKostya S. Novoselov - Univ Manchester, Natl Graphene Inst, Manchester, EnglandLuzhao Sun - Beijing Graphene Inst, Beijing 100095, Peoples R ChinaYue Qi - Beijing Graphene Inst, Beijing 100095, Peoples R ChinaKaicheng Jia - Beijing Graphene Inst, Beijing 100095, Peoples R ChinaZhongfan Liu - Beijing Graphene Inst, Beijing 100095, Peoples R ChinaOliver Burton - Univ Cambridge, Dept Engn, Cambridge CB3 OFA, EnglandJack Alexander-Webber - Univ Cambridge, Dept Engn, Cambridge CB3 OFA, EnglandStephan Hofmann - Univ Cambridge, Dept Engn, Cambridge CB3 OFA, EnglandYang Cao - Univ Melbourne, Dept Chem Engn, Parkville, Vic 3010, AustraliaYu Long - Tianjin Univ, Nanoyang Grp, Tianjin Key Lab Adv Carbon & Electrochem Energy S, Sch Chem Engn & Technol, Tianjin 300072, Peoples R ChinaQuan-Hong Yang - Tianjin Univ, Nanoyang Grp, Tianjin Key Lab Adv Carbon & Electrochem Energy S, Sch Chem Engn & Technol, Tianjin 300072, Peoples R ChinaDan Li - Univ Melbourne, Dept Chem Engn, Parkville, Vic 3010, AustraliaSoo Ho Choi - Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaKi Kang Kim - Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaYoung Hee Lee - Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South KoreaMian Li - Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Data Driven High Safety Energy Ma, Ningbo, Peoples R ChinaQing Huang - Ningbo Institute of Industrial TechnologyYury Gogotsi - Drexel University, Materials Science and EngineeringNicholas Clark - Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, SingaporeAmy Carl - Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, SingaporeRoman Gorbachev - Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, SingaporeThomas Olsen - Technical University of DenmarkJohanna Rosen - Linköping UniversityKristian Sommer Thygesen - Technical University of DenmarkDmitri K. Efetov - Ludwig Maximilians Univ Munchen, Munich, GermanyBjarke S. Jessen - Tech Univ Denmark, DTU Phys, DK-2800 Lyngby, DenmarkMatthew Yankowitz - Univ Washington, Seattle, WA USAJulien Barrier - ICFO Inst Photon Sci, Barcelona 08860, SpainRoshan Krishna Kumar - ICFO Inst Photon Sci, Barcelona 08860, SpainFrank H. L. Koppens - Friedrich-Ebert-Stiftung e.V.Hui Deng - Univ Michigan, Dept Phys, Ann Arbor, MI USAXiaoqin Li - Univ Texas Austin, Dept Phys, Austin, TX 78712 USASiyuan Dai - Auburn Univ, Auburn, AL USAD. N. Basov - Columbia Univ, New York, NY USAXinran Wang - Suzhou Research InstituteSaptarshi Das - Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USAXiangfeng Duan - Univ Calif Los Angeles, Los Angeles, CA USAZhihao Yu - Suzhou Lab, Suzhou, Peoples R ChinaMarkus Borsch - Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI USAAndrea C. Ferrari - University of CambridgeRupert Huber - Univ Regensburg, Dept Phys, Regensburg, GermanyMackillo Kira - Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI USAFengnian Xia - Yale UniversityXiao Wang - Univ Calif Los Angeles, Los Angeles, CA USAZhong-Shuai Wu - Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian, Peoples R ChinaXinliang Feng - Technische Universität DresdenPatrice Simon - Université Toulouse III - Paul SabatierHui-Ming Cheng - Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R ChinaBilu Liu - Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen, Guangdong, Peoples R ChinaYi Xie - Univ Sci & Technol China, Hefei, Anhui, Peoples R ChinaWanqin Jin - Nanjing Tech Univ, Nanjing, Peoples R ChinaRahul Raveendran Nair - Univ Manchester, Natl Graphene Inst, Manchester, EnglandYan Xu - Huawei Technologies (China)Qing Zhang - Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R ChinaAjit K. Katiyar - Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South KoreaJong-Hyun Ahn - Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South KoreaIgor Aharonovich - Univ Technol Sydney, Sydney, AustraliaMark C. Hersam - Northwestern UniversityStephan Roche - ICREA, Barcelona 08193, SpainQilin Hua - Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100084, Peoples R ChinaGuozhen Shen - Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100084, Peoples R ChinaTianling Ren - Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100084, Peoples R ChinaHao-Bin Zhang - Beijing Univ Chem Technol, State Key Lab Organ Inorgan Composites, Beijing 100029, Peoples R ChinaChong Min Koo - Sungkyunkwan UniversityNikhil Koratkar - Rensselaer Polytech Inst, Troy, NY 12180 USAVittorio Pellegrini - BeDimensional, I-16163 Genoa, Liguria, ItalyRobert J. Young - Univ Manchester, Natl Graphene Inst, Manchester, EnglandBill Qu - Sixth Element Inc, Changzhou, Jiangsu, Peoples R ChinaMax Lemme - Rhein Westfal TH Aachen, Aachen, GermanyAndrew J. Pollard - Natl Phys Lab NPL, Teddington TW11 0LW, England
- Publication Details
- 2d materials, v 13(2), 021501
- Publisher
- IOP Publishing Ltd
- Number of pages
- 85
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:001718544600001
- Scopus ID
- 2-s2.0-105033658364
- Other Identifier
- 991022170441004721
InCites Highlights
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- Collaboration types
- Industry collaboration
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- Physics, Applied