Journal article
The Simulation of a-Si:H Junction Capacitance Measurements
MRS proceedings, v 297, pp 839-844
01 Jan 1993
Abstract
Junction capacitance measurements have been used by many researchers to study the density of states in the mobility gap of hydrogenated amorphous silicon. However, the data analysis methods used for these studies are based on approximate analytic models which may not always be appropriate. In order to understand better the experimental method and the models, we have performed simulations using a numerical simulator which can calculate the complete time-dependent response of an amorphous semiconductor device. The current in a device is simulated as a function of time when a small sinusoidal voltage applied in addition to a DC bias voltage. The out-of-phase and in-phase components of the sinusoidal part of the current are used to calculate the capacitance and series resistance, just as they measured in an experiment. The results of simulated experiments at different temperatures are shown.
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Details
- Title
- The Simulation of a-Si:H Junction Capacitance Measurements
- Creators
- Finley R. Shapiro - Drexel UniversityArtjit Das - Drexel University
- Contributors
- Peter G. LeComber (Editor)Arun Madan (Editor)Eric A. Schiff (Editor)Kazunobu Tanaka (Editor)Malcolm J. Thompson (Editor)
- Publication Details
- MRS proceedings, v 297, pp 839-844
- Publisher
- Cambridge University Press
- Number of pages
- 6
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:A1993BZ54T00128
- Scopus ID
- 2-s2.0-0027884420
- Other Identifier
- 991019184057204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Materials Science, Multidisciplinary
- Optics
- Physics, Applied