Journal article
The effect of optical intensity on the photoresponse of the GaAs mesfet
Microwave and optical technology letters, v 6(1), pp 38-42
Jan 1993
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Abstract
This article is concerned with the effect optical intensity has on the frequency response, gain, and bandwidth of the GaAs MESFET when used as an optical detector. Measurements show that the photoresponse gain can be increased by 10 dB as the optical intensity is lowered, while the bandwidth of the MESFET can be increased by an order of magnitude with an increase in optical power. © 1993 John Wiley & sons, Inc.
Metrics
Details
- Title
- The effect of optical intensity on the photoresponse of the GaAs mesfet
- Creators
- Arthur Paolella - Advanced Materials and Devices (United States)Peter R. Herczfeld - ECE Department, Center for Microwave/Light Wave Engineering, Philadelphia, Pennsylvania 19104Asher Madjar - ECE Department, Center for Microwave/Light Wave Engineering, Philadelphia, Pennsylvania 19104
- Publication Details
- Microwave and optical technology letters, v 6(1), pp 38-42
- Publisher
- Wiley Subscription Services, Inc., A Wiley Company
- Number of pages
- 5
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering; [Retired Faculty]
- Web of Science ID
- WOS:A1993KF09400011
- Scopus ID
- 2-s2.0-0027147232
- Other Identifier
- 991020594549104721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Optics