The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors

Journal article

Peer reviewed

Bahram Nabet, Murilo A Romero, Adriano Cola and Fabio Quaranta

Journal of electronic materials, v 33(2), pp 123-127

2004

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Applied sciences

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronics

Exact sciences and technology

Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of bulk materials and thin films

Optoelectronic devices

Photodetectors (including infrared and CCD detectors)

Physics

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors
Creators: Bahram Nabet - Drexel University
Murilo A Romero - Universidade de São Paulo
Adriano Cola - C.N.R-I.M.E., Lecce, Italy
Fabio Quaranta - C.N.R-I.M.E., Lecce, Italy
Publication Details: Journal of electronic materials, v 33(2), pp 123-127
Publisher: Institute of Electrical and Electronics Engineers
Resource Type: Journal article
Language: English
Academic Unit: Electrical and Computer Engineering
Web of Science ID: WOS:000189077800007
Scopus ID: 2-s2.0-1542276502
Other Identifier: 991019168206904721

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Collaboration types: Domestic collaboration; International collaboration
Web of Science research areas: Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied