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Thermal analysis of oxide-confined VCSEL arrays
Journal article   Peer reviewed

Thermal analysis of oxide-confined VCSEL arrays

Jinhui Wang, Ioannis Savidis and Eby G. Friedman
Microelectronics Journal, v 42(5), pp 820-825
2011
DOI: https://doi.org/10.1016/j.mejo.2010.11.005

Abstract

Maximum internal temperature Thermal analysis Three-dimensional (3-D) modeling Vertical cavity surface emitting lasers (VCSEL)
A thermo-electric 3-D analysis of 980 nm vertical cavity surface emitting laser (VCSEL) arrays based on the finite element method (FEM) is presented in this paper. High performance VCSEL array structures with square mesas are modeled by applying a steady-state 3-D heat dissipation model. Several oxide aperture diameters ( D a ), substrate thicknesses, current densities, array sizes, heat flux, and temperature profiles are considered. The analysis shows that the maximum internal temperature of a VCSEL array ranges from 306.5 K for a 20 μm D a , 100 μm substrate thickness, 666 A/cm 2 current density, and a 1×1 array size to 412 K for a 5 μm D a , 300 μm substrate thickness, 1200 A/cm 2 current density, and a 4×4 array size.

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Domestic collaboration
International collaboration
Web of Science research areas
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
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