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Thin‐Film Electronics: Oxide Thin‐Film Electronics using All‐MXene Electrical Contacts (Adv. Mater. 15/2018)
Journal article   Open access   Peer reviewed

Thin‐Film Electronics: Oxide Thin‐Film Electronics using All‐MXene Electrical Contacts (Adv. Mater. 15/2018)

Zhenwei Wang, Hyunho Kim and Husam N. Alshareef
Advanced materials (Weinheim), v 30(15), pn/a
01 Apr 2018
url
https://doi.org/10.1002/adma.201870103View
Published, Version of Record (VoR) Open

Abstract

complementary metal oxide semiconductor MXene tin monoxide zinc oxide
Two‐dimensional metal carbides (MXenes) are successfully integrated into oxide semiconductor electrical switching devices for the first time by Husam N. Alshareef and co‐workers in article number 1706656. Both p‐ and n‐type oxide thin‐film transistors are fabricated entirely using MXene electrical contacts. The inside front cover shows complementary metal oxide semiconductor inverters using two different semiconductor oxides.

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