Journal article
Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
ACS nano, v 14(2), pp 2202-2211
25 Feb 2020
PMID: 31986010
Abstract
Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti3C2 MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti3C2 MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of , similar to 330 meV between the GaN nanowire and the Ti3C2 MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.
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Details
- Title
- Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
- Creators
- Aditya Prabaswara - King Abdullah University of Science and TechnologyHyunho Kim - King Abdullah University of Science and TechnologyJung-Wook Min - KAUST, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi ArabiaRam Chandra Subedi - King Abdullah University of Science and TechnologyDalaver H. Anjum - King Abdullah University of Science and TechnologyBambar Davaasuren - King Abdullah University of Science and TechnologyKalani Moore - University of LimerickMichele Conroy - University of LimerickSomak Mitra - King Abdullah University of Science and TechnologyIman S. Rogan - KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi ArabiaTien Khee Ng - King Abdullah University of Science and TechnologyHusam N. Alshareef - King Abdullah University of Science and TechnologyBoon S. Ooi - King Abdullah University of Science and Technology
- Publication Details
- ACS nano, v 14(2), pp 2202-2211
- Publisher
- Amer Chemical Soc
- Number of pages
- 10
- Grant note
- C/M-20000-12-001-77; KCR/1/4055-01-01 / MBE King Abdullah University of Science and Technology (KAUST) baseline funding; King Abdullah University of Science & Technology KACST TIC R2-FP -008 / King Abdulaziz City for Science and Technology (KACST)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000518024700088
- Scopus ID
- 2-s2.0-85081182137
- Other Identifier
- 991022059814704721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Chemistry, Multidisciplinary
- Chemistry, Physical
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology