Journal article
Tunable Microwave Conductance of Nanodomains in Ferroelectric PbZr0.2Ti0.8O3 Thin Film
Advanced electronic materials, v 8(3), pn/a
01 Mar 2022
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Ferroelectric materials exhibit spontaneous polarization that can be switched by electric field. Beyond traditional applications as nonvolatile capacitive elements, the interplay between polarization and electronic transport in ferroelectric thin films has enabled a path to neuromorphic device applications involving resistive switching. A fundamental challenge, however, is that finite electronic conductivity may introduce considerable power dissipation and perhaps destabilize ferroelectricity itself. Here, tunable microwave frequency electronic response of domain walls injected into ferroelectric lead zirconate titanate (PbZr0.2Ti0.8O3) on the level of a single nanodomain is revealed. Tunable microwave response is detected through first-order reversal curve spectroscopy combined with scanning microwave impedance microscopy measurements taken near 3 GHz. Contributions of film interfaces to the measured AC conduction through subtractive milling, where the film exhibited improved conduction properties after removal of surface layers, are investigated. Using statistical analysis and finite element modeling, we inferred that the mechanism of tunable microwave conductance is the variable area of the domain wall in the switching volume. These observations open the possibilities for ferroelectric memristors or volatile resistive switches, localized to several tens of nanometers and operating according to well-defined dynamics under an applied field.
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Details
- Title
- Tunable Microwave Conductance of Nanodomains in Ferroelectric PbZr0.2Ti0.8O3 Thin Film
- Creators
- Stuart R. Burns - UNSW SydneyAlexander Tselev - University of AveiroAnton V. Ievlev - Oak Ridge National LaboratoryJoshua C. Agar - University of California, BerkeleyLane W. Martin - University of California, BerkeleySergei V. Kalinin - Oak Ridge National LaboratoryDaniel Sando - UNSW SydneyPetro Maksymovych - Oak Ridge National Laboratory
- Publication Details
- Advanced electronic materials, v 8(3), pn/a
- Publisher
- Wiley
- Number of pages
- 8
- Grant note
- UIDB/50011/2020; UIDP/50011/2020 / FCT/MEC; Fundacao para a Ciencia e a Tecnologia (FCT) UNSW Science Ph.D. Writing Scholarship Australian Government RES-1839234; DMR-1708615 / National Science Foundation; National Science Foundation (NSF) Science Education and Workforce Development Programs at Oak Ridge National Laboratory Canada First Research Excellence Fund CE170100039 / Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies; Australian Research Council
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000728628800001
- Scopus ID
- 2-s2.0-85120846131
- Other Identifier
- 991021890007604721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- Physics, Applied