Journal article
Ultra-High-Speed Dilute Nitride Photodetectors on GaAs Substrate for 1310 nm Operation
Advanced optical materials, v 13(25), 2500115
03 Jul 2025
Abstract
Ultra-high-speed photonic devices covering O- and C-bands (1260-1565 nm) are in great demand for datacom and telecom applications, and are almost exclusively produced on InP substrates due to its bandgap, and high carrier mobility. Addition of small amounts of Nitrogen to III-V compounds, known as dilute nitride (DN) technology, modifies the bandgap, but results in high effective masses, making it unsuitable for transit-time dependent devices such as transistors, PIN and metal-semiconductor-metal photodetectors (MSM-PD's). A family of devices is produced that circumvent these limitations by incorporating doped heterojunctions that decrease the dark current, produce reservoir(s) of confined two-dimensional electron gas (2DEG), and landscape the electric field. Consequently, optically generated electrons navigate a thin absorption region to reach the 2DEG, causing current in external circuitry without arriving at anode. These 2DEG-DNMSM's have low dark current (<1.0 nA), and the fastest reported DN response speed with rise time of 11 ps, fall time of 28 ps, and pulse-width of 14 ps; a speed which remains the same even when cathode-anode distance increases by 3x. These opto-plasmonic InGaAs:N devices, fabricated on GaAs using standard processes compete favorably, at fraction of the cost, with InGaAs on InP devices which have > 60x higher electron mobility.
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Details
- Title
- Ultra-High-Speed Dilute Nitride Photodetectors on GaAs Substrate for 1310 nm Operation
- Creators
- Bahram Nabet - Drexel University, Electrical and Computer EngineeringAdriano Cola - Institute for Microelectronics and MicrosystemsFabio Quaranta - Institute for Microelectronics and MicrosystemsMichel Francois - Orasure TechnologiesMarc Currie - United States Naval Research Laboratory
- Publication Details
- Advanced optical materials, v 13(25), 2500115
- Publisher
- Wiley
- Number of pages
- 13
- Grant note
- NSF SBIR Phase I Award 2026118 / United States National Science Foundation (NSF) Small Business Innovation Research (SBIR) IQE Inc. Office of Naval Research; United States Department of Defense; United States Navy
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:001522018900001
- Scopus ID
- 2-s2.0-105009857850
- Other Identifier
- 991022062959004721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Optics