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Ultra-High Speed, High-Sensitivity Spin-Cast MXene-Semiconductor-MXene Photodetectors
Journal article   Open access   Peer reviewed

Ultra-High Speed, High-Sensitivity Spin-Cast MXene-Semiconductor-MXene Photodetectors

Kiana Montazeri, Marc Currie, Michel W. Barsoum and Bahram Nabet
Advanced functional materials
07 Oct 2022
url
https://doi.org/10.1002/adfm.202206942View
Accepted (AM)Open Access (Publisher-Specific) Open

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
A simple room-temperature process of depositing MXene on a III-V structure with embedded 2D electron gas (2DEG) is used, which results in a large area, 2x104 mu m2$2 \times {10<^>4}\mu {m<^>2}$, photodetector (PD) device that greatly outperforms vacuum deposited Ti/Au metal-semiconductor-metal (MSM) PD's. By co-optimizing properties of 2D MXene contacts and the III-V material heterojunctions, this device sets new operating records with responsivity up to 1.04 A W--(1) at low optical powers, corresponding to >230% internal quantum efficiency, dark current of 50 fA mu m2$\frac{{fA}}{{\mu {m<^>2}}}$, >105.6-dB dynamic range, and 25-150 ps response time, which improves the previous MXene-Semiconductor-MXene responsivity by >2.7 times and is 7 x 10(3) --10(6) times faster compared to other MXene-based PDs. This is achieved by enhancing the Schottky barrier height by forming a Van der Waals (vdW) heterojunction between a wide bandgap AlGaAs surface layer and spin coated Ti3C2Tz electrodes. A layered architecture transports the optically generated electrons to a 2DEG channel at the GaAs/AlGaAs heterointerface, where they are rapidly collected. The landscaped electric field pushes the slow holes to an underlying low temperature-grown GaAs (LT-GaAs) region where they recombine. The proposed Schottky-2DEG Photoconductor-Schottky model for device operation shows how this device circumvents the canonical limitations of gain-bandwidth product, and carrier transit time, while replacing the need for vacuum deposition of gold or other precious metals.

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Collaboration types
Domestic collaboration
Web of Science research areas
Chemistry, Multidisciplinary
Chemistry, Physical
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Physics, Applied
Physics, Condensed Matter
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