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Journal article
Ultra-high Photoresponsivity in Suspended Metal-SemiconductorMetal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
Scientific reports, v 8
19 Jan 2018
PMID: 29352140
Abstract
The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be similar to 1.4 x 10(4) A/W, which is > 10(4) times higher compared to prior reports, while the detectivity D* was computed to be similar to 2.3 x 10(11) Jones at 300 K at an optical power P of similar to 14.5 pW and wavelength lambda of similar to 700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) similar to 10(4). From time-resolved photocurrent measurements, a decay time tau(d) similar to 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.
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Details
- Title
- Ultra-high Photoresponsivity in Suspended Metal-SemiconductorMetal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
- Creators
- Gustavo A. Saenz - University of North TexasGoran Karapetrov - Drexel UniversityJames Curtis - Drexel UniversityAnupama B. Kaul - The University of Texas at El Paso
- Publication Details
- Scientific reports, v 8
- Publisher
- Springer Nature
- Number of pages
- 11
- Grant note
- DE-SC0012575 / Center for the Computational Design of Functional Layered Materials (CCDM), an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences; United States Department of Energy (DOE) FA9550-15-1-0200 / Air Force Office of Scientific Research; United States Department of Defense; Air Force Office of Scientific Research (AFOSR)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:000422891000106
- Scopus ID
- 2-s2.0-85040861786
- Other Identifier
- 991019168405204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary