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Unraveling the Semiconducting/Metallic Discrepancy in Ni-3(HITP)(2)
Journal article   Open access   Peer reviewed

Unraveling the Semiconducting/Metallic Discrepancy in Ni-3(HITP)(2)

Michael E. Foster, Karl Sohlberg, Mark D. Allendorf and A. Alec Talin
The journal of physical chemistry letters, v 9(3), pp 481-486
01 Feb 2018
PMID: 29316790
url
https://www.osti.gov/biblio/1421638View

Abstract

Chemistry Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Atomic, Molecular & Chemical Science & Technology Science & Technology - Other Topics Technology
Ni-3(2,3,6,7,10,11-hexaiminotriphenylene)(2) is a pi-stacked layered metal-organic framework material with extended pi-conjugation that is analogous to graphene. Published experimental results indicate that the material is semiconducting, but all theoretical studies to date predict the bulk material to be metallic. Given that previous experimental work was carried out on specimens containing complex nanocrystalline microstructures and the tendency for internal interfaces to introduce transport barriers, we apply DFT to investigate the influence of internal interface defects on the electronic structure of Ni-3(HITP)(2). The results show that interface defects can introduce a transport barrier by breaking the pi-conjugation and/or decreasing the dispersion of the electronic bands near the Fermi level. We demonstrate that the presence of defects can open a small gap, in the range of 15-200 meV, which is consistent with the experimentally inferred hopping barrier.

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Collaboration types
Domestic collaboration
Web of Science research areas
Chemistry, Physical
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Physics, Atomic, Molecular & Chemical
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