Ultrafast nonlinear optical (NLO) response, fast carrier recovery, broadband
absorption, and resistance to radiation and heat make 2D materials promising
for photonic technologies. However, low electronic conductivity and carrier
concentration limit the performance of semiconducting or semimetallic
materials. This work investigates the ultrafast NLO properties and carrier
dynamics of Ta$_{4}$C$_{3}$T$_{x}$ and out-of-plane ordered
Mo$_{2}$Ti$_{2}$C$_{3}$T$_{x}$ MXenes using Z-scan and pump-probe optical Kerr
effect techniques under visible and infrared femtosecond laser pulses. Their
NLO response surpasses all previously studied MXenes and most other 2D
nanomaterials, attaining exceptionally high third-order susceptibility
(\c{hi}(3)) values on the order of 10^{-13} esu. Mo$_{2}$Ti$_{2}$C$_{3}$T$_{x}$
exhibits the strongest NLO response under both excitation regimes, attributed
to charge transfer between Mo and Ti layers in the MXene structure. Under
visible excitation, the studied MXenes display pronounced saturable absorption,
while under infrared excitation, they exhibit strong reverse saturable
absorption, resulting in efficient optical limiting. Additionally, pump-probe
experiments identify two distinct relaxation processes: a fast one on the
sub-picosecond timescale and a slower one a few picoseconds after
photoexcitation. Our results indicate that these MXenes are among the strongest
NLO materials. They show their great potential for advanced photonic and
optoelectronic applications in laser technologies, optical protection,
telecommunications, and optical/quantum computing.
Metrics
9 Record Views
Details
Title
Emerging Ta$_{4}$C$_{3}$ and Mo$_{2}$Ti$_{2}$C$_{3}$ MXene Nanosheets for Ultrafast Photonics
Creators
Michalis Stavrou
Benjamin Chacon
Maria Farsari
Anna Maria Pappa
Lucia Gemma Delogu
Yury Gogotsi
David Gray
Resource Type
Preprint
Language
English
Academic Unit
Materials Science and Engineering; A.J. Drexel Nanomaterials Institute