Spin-momentum locking in the surface mode of topological insulators (TI)
leads to the surface accumulation of spin-polarized electrons caused by bias
current flows through TI samples. Here, we demonstrate that scanning tunneling
microscopy can be used to sense this surface spin-polarized electron
accumulation. We present experimental results of this sensing for Sn-doped
Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W
tips. We observe a linear increase in the spin-accumulation as a function of
bias current through TI samples.
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Title
Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy