Spin-momentum locking in the surface mode of topological insulators (TI)
leads to the surface accumulation of spin-polarized electrons caused by bias
current flows through TI samples. Here, we demonstrate that scanning tunneling
microscopy can be used to sense this surface spin-polarized electron
accumulation. We present experimental results of this sensing for Sn-doped
Bi$_2$Se$_3$ samples by employing Fe-coated W tips as well as non-magnetic W
tips. We observe a linear increase in the spin-accumulation as a function of
bias current through TI samples.
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Details
Title
Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy
Creators
S Tyagi
M Dreyer
D Bowen
D Hinkel
P. J Taylor
A. L Friedman
R. E Butera
C Krafft
I Mayergoyz
Publication Details
arXiv.org
Resource Type
Preprint
Language
English
Academic Unit
Physics
Other Identifier
991021865930604721
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