Negative Magnetoresistance in (In,Mn)As

S. J May; A. J Blattner; B. W Wessels

doi:10.48550/arxiv.cond-mat/0406230

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Negative Magnetoresistance in (In,Mn)As

S. J May, A. J Blattner and B. W Wessels

09 Jun 2004

DOI: https://doi.org/10.48550/arxiv.cond-mat/0406230

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Abstract

Physics - Materials Science

The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 ohm-cm to 0.05 ohm-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.

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Title: Negative Magnetoresistance in (In,Mn)As
Creators: S. J May
A. J Blattner
B. W Wessels
Resource Type: Preprint
Language: English
Academic Unit: Materials Science and Engineering
Other Identifier: 991021934210504721

Negative Magnetoresistance in (In,Mn)As

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Abstract

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