Conference poster
Sb doping via drive-in diffusion as an alternative to in-situ doping in VTD
24 Oct 2024
Abstract
Group-V doping can enhance the efficiency of CdTe photovoltaic devices by increasing the open-circuit voltage (Voc), if long lifetimes can be retained and radiative voltage loss can be avoided. In this preliminary study, ex-situ Sb doping via drive-in diffusion improved grain sizes compared to Sb-free films without CdCl2 treatment. Sb doping did not reduce the carrier lifetime for uniform CdSeTe absorbers. Additionally, the CST-air surface recombination decreased with Sb. No potential fluctuations were observed by PL at this doping level. The [Sb] and carrier concentration for this study are not yet measured so the conclusions drawn are all preliminary
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Details
- Title
- Sb doping via drive-in diffusion as an alternative to in-situ doping in VTD
- Creators
- Alex Ashley - Drexel UniversityGregory Manoukian - Drexel UniversityAli Ciris - University of DelawareBin Du - University of DelawareKevin Dobson - University of DelawareWilliam Shafarman - University of DelawareJason Baxter - Drexel University
- Publisher
- U.S. Department of Energy Office of Scientific and Technical Information
- Resource Type
- Conference poster
- Language
- English
- Academic Unit
- Chemical and Biological Engineering; College of Engineering
- Other Identifier
- 991022026257504721