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Carrier Dynamics and Photoluminescence in Antimony-Doped CdTe and CdSeTe
Conference proceeding   Open access

Carrier Dynamics and Photoluminescence in Antimony-Doped CdTe and CdSeTe

Gregory A. Manoukian, Calvin Fai, Bin Du, William N. Shafarman, Charles J. Hages and Jason B. Baxter
Conference record of the IEEE Photovoltaic Specialists Conference, pp 0944-0946
09 Jun 2024
url
https://www.osti.gov/servlets/purl/2406971View
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Abstract

Cadmium compounds cadmium telluride carrier dynamics Doping Films II-VI semiconductor materials Photoluminescence Semiconductor device measurement semiconductor physics Semiconductor process modeling Surface fitting Temperature measurement terahertz Transient analysis Spectroscopy
Arsenic (As)-doped graded Cd(Se, Te) photovoltaics have achieved record efficiency of 22.4%, but further increases in efficiency have been limited by doping activation of only ≈1% and radiative voltage losses of ≈100 meV. Antimony (Sb) can also act as a p-type dopant of Cd(Se,Te) but has received relatively little attention. We measured carrier dynamics and photoluminescence of Sb-doped CdTe and CdSeTe films grown by vapor-transport deposition, with dopant activation up to ≈20%. Time resolved terahertz (TRTS) and photoluminescence (TRPL) data were fit by simulating the semiconductor equations, revealing bulk lifetimes of >20 ns in CdTe:Sb and >65 ns in CdSeTe:Sb and surface recombination velocities <1000 cm/s at alumina interfaces. We also qualitatively compare transients and PL spectra of doped and undoped films, with no apparent variation associated with hole concentrations up to 10 15 cm -3 . Preliminary variable temperature steady state photoluminescence (VT-SSPL) indicates dominant band-gap emission in CdSeTe:Sb and no evidence of potential fluctuations with Sb-doping up to this hole concentration.

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Collaboration types
Domestic collaboration
Web of Science research areas
Energy & Fuels
Engineering, Electrical & Electronic
Optics
Physics, Applied
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