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Modeling of a high sensitivity heterostructure varactor with optical modulation capability
Conference proceeding

Modeling of a high sensitivity heterostructure varactor with optical modulation capability

X Zhao, A Cola, F Quaranta, A Persano, E Gallo, J.E Spanier, B Nabet and IEEE
2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, pp 454-457
Oct 2007

Abstract

2DHG Distributed Bragg reflectors Epitaxial layers Frequency frequency multiplier Gallium arsenide Heterostructure-barrier-varactor Intensity modulation MSM Optical modulation Optical sensors Photodetectors Resonance Varactors
We have previously developed an optically modulated high sensitivity heterostructure varactor whose C max /C min middot ratio of up to 113, and sensitivity of up to 35 are among the highest reported in the literature. These figures of merit indicate that this device is a good candidate for a number of applications including high order frequency multipliers. The device consists of a p-type delta modulation-doped heterostructure of AlGaAs/GaAs with Al 0.9 Ga 0.1 As/Al 0.24 Ga 0.76 As Distributed Bragg Reflectors (DBR) at the bottom producing a resonant cavity enhanced photodetector structure. As such the device has a dual role of being a sensitive photodetector and a Varactor. In fact, the response shows that the varactor characteristics can be optically modulated and depend on the intensity of the incident optical radiation. In this paper we present a lumped parameter model that captures the physics of the observed behavior. Validity of the model is verified by its correspondence with experimental results as well simulation of the physical structure.

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Collaboration types
Domestic collaboration
International collaboration
Web of Science research areas
Engineering, Electrical & Electronic
Optics
Physics, Applied
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