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Conference proceeding
Optimization of Sb-Doped CdSeTe Solar Cells
Conference record of the IEEE Photovoltaic Specialists Conference, 0925
09 Jun 2024
Abstract
The effect of high-temperature annealing (HTA) treatments and Cd-excess during the in-situ doping of CdSeTe:Sb is investigated. Optimized treatments eliminate the wurtzite phase from the as-deposited CdSeTe layer, while facilitating Se intermixing and grain size enhancement before CdC12 treatment. The improved device stack quality results in a VOC improvement of 250 mV. VOC is further improved by tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition. The lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell with VOC = 849mV, despite a decreased carrier concentration due to the harsh CdC12 treatment.
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Details
- Title
- Optimization of Sb-Doped CdSeTe Solar Cells
- Creators
- Bin Du - University of DelawareGregory A. Manoukian - Drexel UniversityAntonio J. N. Oliveira - International Iberian Nanotechnology LaboratoryKevin Dobson - University of DelawareAayush Nahar - The Ohio State UniversityBrian McCandless - University of DelawareAaron Arehart - The Ohio State UniversityJason B. Baxter - Drexel UniversityWilliam N. Shafarman - University of Delaware
- Publication Details
- Conference record of the IEEE Photovoltaic Specialists Conference, 0925
- Publisher
- IEEE
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Chemical and Biological Engineering; College of Engineering
- Other Identifier
- 991021963115604721