Conference proceeding
Quantifying carrier dynamics and PL characterization of antimony-doped CdTe and CdSeTe
25 Oct 2023
Abstract
Our team has achieved ~20% doping activation of CdSeTe with
antimony (Sb), whose shallow acceptor level makes it a viable
alternative to As.1,2 Arsenic (As)-doped graded CdSeTe
photovoltaics have achieved record efficiencies of 22.3%.
Remaining challenges include doping activation of only ~2% in
polycrystalline films and radiative voltage losses of ~100 mV.
Here we use (transient) terahertz and photoluminescence
spectroscopy of CdTe:Sb and CdSeTe:Sb to show sufficiently
long bulk lifetimes to enable high-efficiency devices. Early
results also indicate dominant bandgap emission in CdSeTe:Sb
and a lack of potential fluctuations with Sb-doping that have
proven detrimental for As-doped films. While more work is
needed, these results show significant promise for Sb doping.
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Details
- Title
- Quantifying carrier dynamics and PL characterization of antimony-doped CdTe and CdSeTe
- Creators
- Gregory Manoukian - Drexel UniversityBin Du - University of DelawareCalvin Fai - Univ. of Florida, Gainesville, FL (United States)Charles Hages - Univ. of Florida, Gainesville, FL (United States)William Shafarman - University of DelawareJason Baxter - Drexel University
- Resource Type
- Conference proceeding
- Language
- English
- Academic Unit
- Chemical and Biological Engineering; College of Engineering
- Identifiers
- 991021811913304721