Journal article
Carrier dynamics in bulk ZnO. I. Intrinsic conductivity measured by terahertz time-domain spectroscopy
Physical review. B, Condensed matter and materials physics, v 80(23)
01 Dec 2009
Abstract
Far-infrared absorption and refractive index of a ZnO wafer were measured as a function of temperature below 120 K using terahertz (THz) time domain spectroscopy. The accompanying frequency-dependent complex conductivity gives an accurate picture of electron dynamics because the measured range of 0.2-2.5 THz brackets the scattering rate. The frequency-dependent conductivity shows the general trends predicted by the Drude model but with significant deviations that are better fit by the generalized Drude model, which allows for a distribution of carrier relaxation times. Conductivity increases with increasing temperature as electrons are thermally activated from shallow donor states, with calculated donor energy of 27 meV and density of 1.4x10(17) cm(-3). Mobilities of similar to 2000 cm(2) V(-1) s(-1) are measured and do not vary significantly with temperature over 60-120 K.
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Details
- Title
- Carrier dynamics in bulk ZnO. I. Intrinsic conductivity measured by terahertz time-domain spectroscopy
- Creators
- Jason B. Baxter - Drexel UniversityCharles A. Schmuttenmaer - Yale University
- Publication Details
- Physical review. B, Condensed matter and materials physics, v 80(23)
- Publisher
- Amer Physical Soc
- Number of pages
- 6
- Grant note
- CHE-0616875 / National Science Foundation; National Science Foundation (NSF)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemical and Biological Engineering
- Web of Science ID
- WOS:000273228800058
- Scopus ID
- 2-s2.0-77954710577
- Other Identifier
- 991019168326704721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Physics, Applied
- Physics, Condensed Matter